VBsemi AP4503GM Key Specifications

1. General Characteristics

• Type: P-Channel Enhancement Mode MOSFET

• Package: SOT-23 (Small Outline Transistor)

• Polarity: P-Channel

• RoHS Compliance: Yes

• Operating Temperature: -55°C to +150°C

2. Electrical Ratings

• Drain-Source Voltage (V_DS): -30V

• Gate-Source Voltage (V_GS): ±20V

• Continuous Drain Current (I_D): -4.5A (at V_GS=-10V)

• Pulsed Drain Current (I_DM): -18A

• Power Dissipation (P_D): 1.25W (at T_A=25°C)

3. On-Resistance & Switching Characteristics

• Drain-Source On-Resistance (R_DS(on)):

  • 45mΩ (at V_GS=-10V, I_D=-4.5A)

  • 60mΩ (at V_GS=-4.5V, I_D=-3.2A)

• Gate Charge (Q_g): 12nC (typ at V_DS=-15V)

• Turn-On Delay Time (t_d(on)): 10ns (typ)

• Turn-Off Delay Time (t_d(off)): 30ns (typ)

4. Body Diode Characteristics

• Forward Voltage (V_SD): -1.2V (at I_SD=-4.5A)

• Reverse Recovery Time (t_rr): 35ns (typ)

5. Applications

• Load Switching (Battery Management)

• Power Management in Portable Devices

• DC-DC Converters

• Motor Control Circuits

Key Features

• Low R_DS(on): Minimizes conduction losses.

• Fast Switching: Suitable for high-frequency applications.

• Compact SOT-23 Package: Ideal for space-constrained designs.